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RN2967FE(TE85L,F) PDF预览

RN2967FE(TE85L,F)

更新时间: 2024-02-06 01:23:09
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
6页 349K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR

RN2967FE(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.83最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):80元件数量:2
极性/信道类型:PNP最大功率耗散 (Abs):0.1 W
子类别:BIP General Purpose Small Signal表面贴装:YES
晶体管元件材料:SILICONBase Number Matches:1

RN2967FE(TE85L,F) 数据手册

 浏览型号RN2967FE(TE85L,F)的Datasheet PDF文件第2页浏览型号RN2967FE(TE85L,F)的Datasheet PDF文件第3页浏览型号RN2967FE(TE85L,F)的Datasheet PDF文件第4页浏览型号RN2967FE(TE85L,F)的Datasheet PDF文件第5页浏览型号RN2967FE(TE85L,F)的Datasheet PDF文件第6页 
RN2967FE~RN2969FE  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)  
RN2967FE, RN2968FE, RN2969FE  
Switching, Inverter Circuit, Interface Circuit and  
Unit: mm  
Driver Circuit Applications  
Two devices are incorporated into an Extreme-Super-Mini (6-pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
Complementary to RN1967FE to RN1969FE  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN2967FE  
RN2968FE  
RN2969FE  
10  
22  
47  
47  
47  
22  
R1  
B
JEDEC  
E
JEITA  
TOSHIBA  
2-2N1A  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Weight: 3 mg (typ.)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
50  
Unit  
V
Equivalent Circuit  
(top view)  
V
V
CBO  
CEO  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
50  
V
RN2967FE  
RN2968FE  
RN2969FE  
6  
6
5
4
V
C
V
7  
EBO  
15  
Q2  
Q1  
I
100  
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
P
(Note 1)  
T
j
150  
1
2
3
Storage temperature range  
T
55 to 150  
°C  
stg  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Start of commercial production  
2000-05  
1
2014-03-01  

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