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RN2965FE(TE85L,F) PDF预览

RN2965FE(TE85L,F)

更新时间： 2024-02-03 19:11:19
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
8页 570K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR

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中文翻译

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RN2965FE(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.83最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：80元件数量：2
极性/信道类型：PNP最大功率耗散 (Abs)：0.1 W
子类别：BIP General Purpose Small Signal表面贴装：YES
晶体管元件材料：SILICONBase Number Matches：1

RN2965FE(TE85L,F) 数据手册

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RN2961FE~RN2966FE  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)  
RN2961FE, RN2962FE, RN2963FE  
RN2964FE, RN2965FE, RN2966FE  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
•
•
Two devices are incorporated into an Extreme-Super-Mini (6-pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
•
Complementary to RN1961FE to RN1966FE  
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
RN2961FE  
RN2962FE  
RN2963FE  
RN2964FE  
RN2965FE  
RN2966FE  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
22  
47  
JEDEC  
JEITA  
―
―
E
2.2  
4.7  
TOSHIBA  
2-2N1A  
Weight: 0.003 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Symbol  
Rating  
Unit  
6
5
4
Collector-base voltage  
V
V
−50  
−50  
V
V
CBO  
CEO  
RN2961FE to RN2966FE  
Collector-emitter voltage  
Emitter-base voltage  
Q2  
Q1  
RN2961FE to RN2964FE  
RN2965FE, RN2966FE  
−10  
V
V
EBO  
−5  
Collector current  
I
−100  
100  
mA  
mW  
°C  
C
1
2
3
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note 1)  
C
RN2961FE to RN2966FE  
T
150  
j
T
stg  
−55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Start of commercial production  
2000-05  
1
2014-03-01  
12345678

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 		PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR

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