RN2965CT

更新时间： 2024-02-23 05:51:56

品牌	Logo	应用领域
东芝 - TOSHIBA		驱动器开关
页数	文件大小	规格书
8页	219K
描述
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

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技术参数
数据手册

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RN2965CT 技术参数

生命周期：	Lifetime Buy	包装说明：	SMALL OUTLINE, R-PDSO-F6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
风险等级：	5.5	Is Samacsys：	N
最大集电极电流 (IC)：	0.05 A	集电极-发射极最大电压：	20 V
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	120
JESD-30 代码：	R-PDSO-F6	JESD-609代码：	e0
元件数量：	2	端子数量：	6
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.05 W
认证状态：	Not Qualified	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

RN2965CT 数据手册

RN2961CT~RN2966CT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2961CT,RN2962CT,RN2963CT

RN2964CT,RN2965CT,RN2966CT

Switching Applications

Unit: mm

Inverter Circuit Applications

1.0±0.05

0.15±0.03

Interface Circuit Applications

Driver Circuit Applications

６

１

５

２

４

３

•

Two devices are incorporated into a fine pitch Small Mold (6 pin)

package.

0.35±0.02

0.075±0.03

0.7±0.03

Incorporating a bias resistor into a transistor reduces parts count, which

enables the manufacture of ever more compact equipment and saves

assembly cost.

•

Complementary to RN1961CT to RN1966CT

Equivalent Circuit and Bias Resistor Values

(E1)

1.EMIITTER1

2.EMITTER2

3.BASE2

4.COLLECTOR2

5.BASE1

(E2)

(B2)

(C2)

(B1)

(C1)

Type No.

R1 (kΩ)

R2 (kΩ)

CST6

6.COLLECTOR1

RN2961CT

RN2962CT

RN2963CT

RN2964CT

RN2965CT

RN2966CT

4.7

JEDEC

JEITA

―

TOSHIBA

2-1K1A

2.2

4.7

Weight: 1.0 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)

Equivalent Circuit

(top view)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−20

CBO

CEO

RN2961CT to 2966CT

Collector-emitter voltage

Emitter-base voltage

RN2961CT to 2964CT

RN2965CT, 2966CT

−10

EBO

−5

Collector current

−50

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note1)

140

RN2961CT to 2966CT

150

stg

−55 to 150

°C

Note1: Total rating, mounted on glass-epoxy board of 10mm×10mm×1mmt.

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-04-17

12 3 4 5 6 7 8

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与RN2965CT相关器件

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RN2965FE	TOSHIBA	Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)	获取价格
RN2965FE(TE85L)	TOSHIBA	RN2965FE(TE85L)	获取价格
RN2965FE(TE85L,F)	TOSHIBA	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR	获取价格
RN2965FS	TOSHIBA	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	获取价格
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