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RN2904AFS PDF预览

RN2904AFS

更新时间： 2024-09-16 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体开关小信号双极晶体管光电二极管驱动
页数 文件大小 规格书
8页 178K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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RN2904AFS 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Lifetime Buy包装说明：SMALL OUTLINE, R-PDSO-F6
针数：6Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.51Is Samacsys：N
其他特性：BUILT-IN BIAS RESISTANCE RATIO IS 1最大集电极电流 (IC)：0.08 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：30JESD-30 代码：R-PDSO-F6
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
认证状态：Not Qualified表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

RN2904AFS 数据手册

 浏览型号RN2904AFS的Datasheet PDF文件第2页浏览型号RN2904AFS的Datasheet PDF文件第3页浏览型号RN2904AFS的Datasheet PDF文件第4页浏览型号RN2904AFS的Datasheet PDF文件第5页浏览型号RN2904AFS的Datasheet PDF文件第6页浏览型号RN2904AFS的Datasheet PDF文件第7页 
RN2901AFS~RN2906AFS  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Transistor with Built-in Bias Resistor)  
RN2901AFS, RN2902AFS, RN2903AFS  
RN2904AFS, RN2905AFS, RN2906AFS  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
1.0±0.05  
0.8±0.05  
0.1±0.05  
0.1±0.05  
•
•
Two devices are incorporated into a fine-pitch, small-mold (6-pin)  
package.  
Incorporating a bias resistor into a transistor reduces the parts count.  
1
6
5
Reducing the parts count enables the manufacture of ever more  
compact equipment and saves assembly cost.  
2
•
Complementary to the RN1901AFS to RN1906AFS  
4
3
Equivalent Circuit and Bias Resistor Values  
C
Type No.  
R1 (kΩ)  
R2 (kΩ)  
(E1)  
1.EMITTER1  
2.BASE1  
3.COLLECTOR2  
4.EMITTER2  
5.BASE2  
(B1)  
(C2)  
(E2)  
(B2)  
(C1)  
RN2901AFS  
RN2902AFS  
RN2903AFS  
RN2904AFS  
RN2905AFS  
RN2906AFS  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
R1  
B
22  
6.COLLECTOR1  
fS6  
47  
JEDEC  
―
―
E
2.2  
4.7  
JEITA  
TOSHIBA  
2-1F1D  
Weight: 1 mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristic  
Symbol  
Rating  
Unit  
6
5
4
Collector-base voltage  
V
V
−50  
−50  
V
V
CBO  
CEO  
RN2901AFS to 2906AFS  
Collector-emitter voltage  
Q2  
3
Q1  
RN2901AFS to 2904AFS  
Emitter-base voltage  
−10  
V
V
EBO  
RN2905AFS, 2906AFS  
−5  
Collector current  
I
−80  
mA  
mW  
°C  
C
1
2
Collector power dissipation  
Junction temperature  
P
(Note 1)  
50  
C
RN2901AFS to 2906AFS  
T
j
150  
Storage temperature range  
T
stg  
−55 to 150  
°C  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
1
2010-05-14  
12345678

中文翻译

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