Datasheet > RN2905(TE85L,F)

RN2905(TE85L,F)

更新时间： 2024-11-04 20:39:39

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
7页	575K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

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中文翻译

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技术参数
数据手册

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RN2905(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	80	元件数量：	2
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2905(TE85L,F) 数据手册

RN2901~RN2906

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2901,RN2902,RN2903,RN2904,RN2905,RN2906

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit : mm

z Including two devices in US6 (ultra super mini type with 6 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN1901 to RN1906

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2901

RN2902

RN2903

RN2904

RN2905

RN2906

4.7

US6

JEDEC

―

2.2

4.7

JEITA

2-2J1A

TOSHIBA

Weight: 6.8 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Equivalent Circuit

(Top View)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2901 to 2906

Collector-emitter voltage

RN2901 to 2904

RN2905, 2906

−10

Emitter-base voltage

EBO

−5

Collector current

−100

200

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

RN2901 to 2906

150

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* : Total rating

2010-07-09

12 3 4 5 6 7

中文翻译

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与RN2905(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN2905AFS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2905FE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2905FE(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN2905FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2905FS(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),TSOP
RN2905TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2905TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2905TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2906	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2906(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN,

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