Datasheet > RN2907FE(TPL3)

RN2907FE(TPL3)

更新时间： 2024-11-04 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	332K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

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中文翻译

获取价格

技术参数
数据手册

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RN2907FE(TPL3) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.88	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	80	元件数量：	2
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2907FE(TPL3) 数据手册

RN2907FE~RN2909FE

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

RN2907FE,RN2908FE,RN2909FE

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6-pin) package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

•

Complementary to RN1907FE~RN1909FE

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2907FE

RN2908FE

RN2909FE

JEDEC

JEITA

―

TOSHIBA

2-2N1G

Weight: 0.003 g (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)

Equivalent Circuit

(top view)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2907FE~

RN2909FE

Collector-emitter voltage

RN2907FE

RN2908FE

RN2909FE

−6

Emitter-base voltage

−7

EBO

−15

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

RN2907FE~

RN2909FE

150

−55~150

°C

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

12 3 4 5 6

中文翻译

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与RN2907FE(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN2907FE(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN2907FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2907TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2907TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2907TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2908	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2908(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN,
RN2908(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN2908(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN,
RN2908,LF(CT	TOSHIBA	获取价格	暂无描述

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