Datasheet > RN2905FS(TPL3)

RN2905FS(TPL3)

更新时间： 2024-11-04 20:58:31

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
8页	170K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),TSOP

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中文翻译

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技术参数
数据手册

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RN2905FS(TPL3) 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	最大集电极电流 (IC)：	0.05 A
最小直流电流增益 (hFE)：	120	元件数量：	2
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.05 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2905FS(TPL3) 数据手册

RN2901FS~RN2906FS

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2901FS,RN2902FS,RN2903FS

RN2904FS,RN2905FS,RN2906FS

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit: mm

1.0±0.05

0.8±0.05

0.1±0.05

•

Two devices are incorporated into a fine pitch small mold (6-pin)

package.

•

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

Complementary to RN1901FS~RN1906FS

Equivalent Circuit and Bias Resistor Values

1.EMITTER1

2.BASE1

(E1)

(B1)

(C2)

(E2)

(B2)

(C1)

3.COLLECTOR2

4.EMITTER2

5.BASE2

Type No.

R1 (kΩ)

R2 (kΩ)

6.COLLECTOR1

fS6

RN2901FS

RN2902FS

RN2903FS

RN2904FS

RN2905FS

RN2906FS

4.7

JEDEC

JEITA

―

TOSHIBA

2-1F1D

2.2

4.7

Weight: 0.001g (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)

Equivalent Circuit

Characteristics

Symbol

Rating

Unit

(top view)

Collector-base voltage

−20

CBO

CEO

RN2901FS~2906FS

Collector-emitter voltage

Emitter-base voltage

RN2901FS~2904FS

RN2905FS, 2906FS

−10

EBO

−5

Collector current

−50

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

RN2901FS~2906FS

150

stg

−55~150

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

12 3 4 5 6 7 8

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与RN2905FS(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN2905TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2905TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2905TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2906	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2906(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN,
RN2906(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN2906AFS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2906FE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2906FE(TE85L)	TOSHIBA	获取价格	RN2906FE(TE85L)
RN2906FE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

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