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RN2905 PDF预览

RN2905

更新时间: 2024-11-03 22:43:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管PC
页数 文件大小 规格书
7页 271K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2905 数据手册

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RN2901~RN2906  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2901,RN2902,RN2903,RN2904,RN2905,RN2906  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
Unit in mm  
l Including two devices in US6 (ultra super mini type with 6 leads)  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN1901~RN1906  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN2901  
RN2902  
RN2903  
RN2904  
RN2905  
RN2906  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
2.2  
4.7  
JEDEC  
EIAJ  
2-2J1A  
TOSHIBA  
Weight: 6.8mg  
Equivalent Circuit (Top View)  
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN2901~2906  
Collector-emitter voltage  
RN2901~2904  
RN2905, 2906  
10  
Emitter-base voltage  
V
V
EBO  
5  
Collector current  
I
100  
200  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
* : Total rating  
P
*
C
RN2901~2906  
T
150  
j
T
55~150  
°C  
stg  
1
2001-06-05  

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