Datasheet > RN1607(TE85L,F)

RN1607(TE85L,F)

更新时间： 2024-11-12 18:14:55

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	276K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

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中文翻译

获取价格

技术参数
数据手册

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RN1607(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	1.79	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	80	元件数量：	2
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.3 W
子类别：	BIP General Purpose Small Signals	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN1607(TE85L,F) 数据手册

RN1607~RN1609

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1607, RN1608, RN1609

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z Including two devices in SM6 (super-mini-type with six (6) leads)

z With built-in bias resistors.

z Simplified circuit design

z Reduced number of parts and manufacturing process

z Complementary to RN2607 to RN2609

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1607

RN1608

RN1609

JEDEC

JEITA

―

TOSHIBA

2-3N1A

Weight: 0.015 g (typ.)

Equivalent Circuit

(Top View)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1607 to 1609

Collector-emitter voltage

RN1607

RN1608

RN1609

Emitter-base voltage

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

300

RN1607 to 1609

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Total rating

Start of commercial production

1988-11

2014-03-01

12 3 4 5 6

中文翻译

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与RN1607(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN1607TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1607TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1608	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1608(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN,
RN1608TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1609	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1609(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1609(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN,
RN1609TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1609TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose

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