Datasheet > RN1611

RN1611

更新时间： 2024-11-11 22:43:51

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
5页	171K
描述
TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)

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中文翻译

获取价格

数据手册

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RN1611 数据手册

RN1610,RN1611

TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)

RN1610,RN1611

Unit: mm

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l Including two devices in SM6 (super mini type with 6 leads)

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2610, RN2611

Equivalent Circuit

JEDEC

EIAJ

―

Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

TOSHIBA

Weight: 0.015g

2-3N1A

Characterisstic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

300

150

−55~150

stg

Total rating

Equivalent Circuit (Top View)

2001-06-07

12 3 4 5

中文翻译

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