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RN1610 PDF预览

RN1610

更新时间: 2024-11-11 22:43:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管PC
页数 文件大小 规格书
5页 171K
描述
TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)

RN1610 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:SUPER MINI, SM6, 2-3N1A, 6 PIN
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.53其他特性:BUILIT-IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A基于收集器的最大容量:6 pF
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-G6
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
VCEsat-Max:0.3 VBase Number Matches:1

RN1610 数据手册

 浏览型号RN1610的Datasheet PDF文件第2页浏览型号RN1610的Datasheet PDF文件第3页浏览型号RN1610的Datasheet PDF文件第4页浏览型号RN1610的Datasheet PDF文件第5页 
                                                               
                                                               
RN1610,RN1611  
TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)  
RN1610,RN1611  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
l Including two devices in SM6 (super mini type with 6 leads)  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN2610, RN2611  
Equivalent Circuit  
JEDEC  
EIAJ  
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
TOSHIBA  
Weight: 0.015g  
2-3N1A  
Characterisstic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
5
V
Collector current  
I
100  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
300  
T
150  
j
T
55~150  
stg  
*
Total rating  
Equivalent Circuit (Top View)  
1
2001-06-07  

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