Datasheet > RN1610TE85L

RN1610TE85L

更新时间： 2024-11-12 14:35:35

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
5页	291K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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中文翻译

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技术参数
数据手册

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RN1610TE85L 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code：	unknown	风险等级：	5.79
最大集电极电流 (IC)：	0.1 A	基于收集器的最大容量：	6 pF
集电极-发射极最大电压：	50 V	配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	120	JESD-30 代码：	R-PDSO-G6
元件数量：	2	端子数量：	6
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	250 MHz
VCEsat-Max：	0.3 V	Base Number Matches：	1

RN1610TE85L 数据手册

RN1610, RN1611

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1610, RN1611

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z Including two devices in SM6 (super-mini-type with six (6) leads)

z With built-in bias resistors

z Simplified circuit design

z Reduced number of parts and manufacturing process

z Complementary to RN2610 and RN2611

Equivalent Circuit

SM6

JEDEC

―

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

JEITA

TOSHIBA

2-3N1A

Characteristic

Symbol

Rating

Unit

Weight: 15 mg (typ.)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

300

150

stg

−55 to150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Total rating

Equivalent Circuit (Top View)

2010-04-09

12 3 4 5

中文翻译

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与RN1610TE85L相关器件

型号	品牌	获取价格	描述	数据表
RN1610TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1611	TOSHIBA	获取价格	TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)
RN1611(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN,
RN1611(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1611(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN,
RN1611TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1611TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1611TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN162PJ473CS	SAMSUNG	获取价格	Array/Network Resistor, Isolated, Metal Glaze/thick Film, 0.0625W, 47000ohm, 50V, 5% +/-To
RN1632	VISHAY	获取价格	RESISTOR, NETWORK, FILM, SPECIAL, 0.125 W, SURFACE MOUNT, 1206, CHIP

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