Datasheet > RN1608(TE85L)

RN1608(TE85L)

更新时间： 2024-11-12 20:01:55

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
6页	273K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN, BIP General Purpose Small Signal

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN1608(TE85L) 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	SMALL OUTLINE, R-PDSO-G6	针数：	6
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.75	风险等级：	5.85
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 0.468	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	80	JESD-30 代码：	R-PDSO-G6
元件数量：	2	端子数量：	6
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	250 MHz	Base Number Matches：	1

RN1608(TE85L) 数据手册

RN1607~RN1609

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1607, RN1608, RN1609

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z Including two devices in SM6 (super-mini-type with six (6) leads)

z With built-in bias resistors.

z Simplified circuit design

z Reduced number of parts and manufacturing process

z Complementary to RN2607~RN2609

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1607

RN1608

RN1609

JEDEC

JEITA

―

TOSHIBA

2-3N1A

Weight: 0.015 g (typ.)

Equivalent Circuit

(Top View)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1607~1609

Collector-emitter voltage

RN1607

RN1608

RN1609

Emitter-base voltage

EBO

Collector current

100

300

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1607~1609

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Total rating

2007-11-01

12 3 4 5 6

中文翻译

下载PDF

与RN1608(TE85L)相关器件

型号	品牌	获取价格	描述	数据表
RN1608TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1609	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1609(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1609(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN,
RN1609TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1609TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1610	TOSHIBA	获取价格	TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)
RN1610(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN,
RN1610(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1610(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN,

与RN1608(TE85L)相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1608(TE85L)

RN1608(TE85L) 技术参数

RN1608(TE85L) 数据手册

与RN1608(TE85L)相关器件

与RN1608(TE85L)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1608(TE85L)

RN1608(TE85L) 技术参数

RN1608(TE85L) 数据手册

与RN1608(TE85L)相关器件

与RN1608(TE85L)相关文章

您还可以找

您在本页遇到什么问题？