Datasheet > RN1607TE85L

RN1607TE85L

更新时间： 2024-11-12 20:01:55

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
6页	273K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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技术参数
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RN1607TE85L 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.79	其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 0.213
最大集电极电流 (IC)：	0.1 A	基于收集器的最大容量：	6 pF
集电极-发射极最大电压：	50 V	配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	80	JESD-30 代码：	R-PDSO-G6
元件数量：	2	端子数量：	6
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	250 MHz
VCEsat-Max：	0.3 V	Base Number Matches：	1

RN1607TE85L 数据手册

RN1607~RN1609

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1607, RN1608, RN1609

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z Including two devices in SM6 (super-mini-type with six (6) leads)

z With built-in bias resistors.

z Simplified circuit design

z Reduced number of parts and manufacturing process

z Complementary to RN2607~RN2609

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1607

RN1608

RN1609

JEDEC

JEITA

―

TOSHIBA

2-3N1A

Weight: 0.015 g (typ.)

Equivalent Circuit

(Top View)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1607~1609

Collector-emitter voltage

RN1607

RN1608

RN1609

Emitter-base voltage

EBO

Collector current

100

300

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1607~1609

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

* Total rating

2007-11-01

12 3 4 5 6

中文翻译

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与RN1607TE85L相关器件

型号	品牌	获取价格	描述	数据表
RN1607TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1608	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1608(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN,
RN1608TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1609	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1609(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1609(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN,
RN1609TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1609TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1610	TOSHIBA	获取价格	TOSHIBA Transistor Silicon Npn Epitaxial Type (PCT Process)

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