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RN1206 PDF预览

RN1206

更新时间: 2024-11-19 22:43:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管PC
页数 文件大小 规格书
6页 253K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1206 技术参数

生命周期:Lifetime Buy包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.51其他特性:BUILT-IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC):0.1 A基于收集器的最大容量:6 pF
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
VCEsat-Max:0.3 VBase Number Matches:1

RN1206 数据手册

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RN1201~RN1206  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1201,RN1202,RN1203,RN1204,RN1205,RN1206  
Switching, Inverter Circuit, Interface Circuit  
Unit: mm  
And Driver Circuit Applications  
l With built-in bias resistors.  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN2201~2206  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN1201  
RN1202  
RN1203  
RN1204  
RN1205  
RN1206  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
2.2  
4.7  
JEDEC  
EIAJ  
TOSHIBA  
Weight: 0.13g  
2-4E1A  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1201~1206  
Collector-emitter voltage  
RN1201~1204  
RN1205, 1206  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
300  
150  
55~150  
mA  
mW  
°C  
c
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
c
RN1201~1206  
T
j
T
°C  
stg  
1
2001-06-07  

RN1206 替代型号

型号 品牌 替代类型 描述 数据表
DTC143ZSATP ROHM

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