Datasheet > RN1211

RN1211

更新时间： 2024-10-31 22:43:51

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
4页	166K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

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中文翻译

获取价格

数据手册

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RN1211 数据手册

RN1210,RN1211

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1210,RN1211

And Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit

Unit: mm

l With built-in bias resistors.

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2210, RN2211

Equivalent Circuit

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

JEDEC

―

EIAJ

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

TOSHIBA

Weight: 0.13g

2-4E1A

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

300

150

−55~150

stg

Electrical Characteristics (Ta = 25°C)

Test

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Circuit

―

Collector cut-off current

Emitter cut-off current

= 50V, I = 0

―

100

700

0.3

―

CBO

―

= 5V, I = 0

EBO

DC current gain

―

= 5V, I = 1mA

120

―

CE (sat)

Collector-emitter saturation voltage

Translation frequency

―

= 5mA, I = 0.25mA

0.1

250

―

= 10V, I = 5mA

―

MHz

Collector output capacitance

―

= −10V, I = 0, f = 1MHz

―

3.29

RN1210

Input resistor

―

4.7

6.11

―

kΩ

RN1211

―

2001-06-07

12 3 4

中文翻译

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