Datasheet > RN1207_07

RN1207_07

更新时间： 2024-11-01 04:07:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
5页	287K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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数据手册

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RN1207_07 数据手册

RN1207~RN1209

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1207,RN1208,RN1209

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Unit: mm

z With built-in bias resistors.

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2207~2209

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2207

RN2208

JEDEC

―

EIAJ

TOSHIBA

Weight: 0.13g

2-4E1A

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

Collector-emitter voltage

RN1207

RN1208

RN1209

Emitter-base voltage

EBO

Collector current

100

300

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

stg

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5

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