RN1209

更新时间： 2024-11-23 22:43:51

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
5页	163K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

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中文翻译

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数据手册

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RN1209 数据手册

RN1207~RN1209

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1207,RN1208,RN1209

Unit: mm

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors.

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN2207~2209

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2207

RN2208

JEDEC

EIAJ

―

TOSHIBA

Weight: 0.13g

2-4E1A

Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

Collector-emitter voltage

RN1207

RN1208

RN1209

Emitter-base voltage

EBO

Collector current

100

300

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

°C

stg

2001-06-07

12 3 4 5

中文翻译

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与RN1209相关器件

型号	品牌	获取价格	描述	数据表
RN1209(TPE4)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purp
RN-1209S	RECOM	获取价格	1.25 Watt DIP8 Sigle Output
RN-1209S/H	ETC	获取价格	CONV DC/DC 1.25W 12VIN 09VOUT
RN-1209S/HP	ETC	获取价格	CONV DC/DC 1.25W 12VIN 09VOUT
RN-1209S/P	ETC	获取价格	CONV DC/DC 1.25W 12VIN 09VOUT
RN-1209SHP	RECOM	获取价格	1.25 Watt DIP8 Single Output
RN-1209SP	RECOM	获取价格	1.25 Watt DIP8 Single Output
RN1210	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1210_07	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1211	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)