Datasheet > RN1210_07

RN1210_07

更新时间： 2024-11-20 04:07:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
4页	252K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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中文翻译

获取价格

数据手册

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RN1210_07 数据手册

RN1210,RN1211

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1210,RN1211

And Driver Circuit Applications

Switching, Inverter Circuit, Interface Circuit

Unit: mm

z With built-in bias resistors.

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2210, RN2211

Equivalent Circuit

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

JEDEC

―

EIAJ

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

TOSHIBA

Weight: 0.13g

2-4E1A

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

300

150

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 50V, I = 0

Min

Typ.

Max

Unit

Collector cut-off current

Emitter cut-off current

―

100

700

0.3

―

CBO

―

= 5V, I = 0

EBO

DC current gain

―

= 5V, I = 1mA

120

―

CE (sat)

Collector-emitter saturation voltage

Translation frequency

―

= 5mA, I = 0.25mA

0.1

250

―

= 10V, I = 5mA

―

MHz

Collector output capacitance

―

= −10V, I = 0, f = 1MHz

―

RN1210

Input resistor

―

3.29

4.7

6.11

―

kΩ

RN1211

―

2007-11-01

12 3 4

中文翻译

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与RN1210_07相关器件

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RN1211	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1211(TPE4)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purp
RN-1212S	RECOM	获取价格	1.25 Watt DIP8 Sigle Output
RN-1212S/H	ETC	获取价格	CONV DC/DC 1.25W 12VIN 12VOUT
RN-1212S/HP	ETC	获取价格	CONV DC/DC 1.25W 12VIN 12VOUT
RN-1212S/P	ETC	获取价格	DC DC CONVERTER 12V 1.25W
RN-1212SHP	RECOM	获取价格	1.25 Watt DIP8 Single Output
RN-1212SP	RECOM	获取价格	1.25 Watt DIP8 Single Output
RN-1215S	RECOM	获取价格	1.25 Watt DIP8 Sigle Output
RN-1215S/H	ETC	获取价格	CONV DC/DC 1.25W 12VIN 15VOUT