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RN1207 PDF预览

RN1207

更新时间: 2024-11-19 22:43:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号双极晶体管PC
页数 文件大小 规格书
5页 163K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1207 技术参数

生命周期:Lifetime Buy包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknown风险等级:5.54
Is Samacsys:N最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):80JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

RN1207 数据手册

 浏览型号RN1207的Datasheet PDF文件第2页浏览型号RN1207的Datasheet PDF文件第3页浏览型号RN1207的Datasheet PDF文件第4页浏览型号RN1207的Datasheet PDF文件第5页 
                                                               
                                                               
RN1207~RN1209  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1207,RN1208,RN1209  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
l With built-in bias resistors.  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN2207~2209  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN2207  
RN2208  
RN2208  
10  
22  
47  
47  
47  
22  
JEDEC  
EIAJ  
TOSHIBA  
Weight: 0.13g  
2-4E1A  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
Collector-emitter voltage  
RN1207  
RN1208  
RN1209  
6
Emitter-base voltage  
V
V
7
EBO  
15  
Collector current  
I
100  
300  
150  
55~150  
mA  
mW  
°C  
c
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
c
T
j
T
°C  
stg  
1
2001-06-07  

RN1207 替代型号

型号 品牌 替代类型 描述 数据表
2SC2058S ROHM

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