Datasheet > RM300N80T7

RM300N80T7

更新时间： 2024-09-13 18:09:19

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	345K
描述
Vdss (V) : 80 V;Id @ 25C (A) : 300 A;Rds-on (typ) (mOhms) : 2.4 mOhms;Total Gate Charge (nQ) typ : 257 nQ;Maximum Power Dissipation (W) : 500 W;Input Capacitance (Ciss) : 13200 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-263-7L

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中文翻译

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RM300N80T7 数据手册

RM300N80T7

N-Channel Enhancement Mode Power MOSFET

Features

BV 80 V

Simplified Outline

Symbol

4.Drain

I^D300 A

P^tot

500 W

R^DS(ON)ʆ 2.8 mΩ @ VGS = 10 V

Surface-mounted package

Tj max 175Ȼ

Advanced trench cell design

MSL1

1.Gate

Applications

1 2 3 5 6 7

2,3

BMS appliances

Top View

TO-263-7L

Source

5,6,7

Power appliances

High power inverter system

Halogen-free

Marking

300N80

Package

Quantity

800

Product Name

RM300N80T7

TO-263-7L

Limiting Values

Symbol

Parameter

Conditions

T_C= 25 ഒ

Min Max Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

Drain Current ( DC )

V_GS

I_D*^,***

T_C= 25 ഒ

300

T_C= 25 ഒ, V_GS= 10 V

I_DM*^,**^,*** Drain Current ( Pulsed )

800

500

175

300

P_tot*

T_stg

T_J

Drain power dissipation

Storage Temperature

Junction Temperature

ഒ

T_C= 25 ഒ

ꢀ

-55

I_S

Continuous-Source Current

T_C= 25 ഒ

ꢀ

EAS*

Single Pulsed Avalanche Energy

2000 mJ

V^DD= 50V, L= 0.5 mH, RG=1˖

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

R_θJA

Thermal Resistance- Junction to Ambient

32.1

0.45

ഒ/W

ꢀ

R_θJC

Thermal Resistance- Junction to Case

Surface Mounted on 1 in²pad area, t ꢀ 10 sec

Pulse width ꢀ 300 ꢁs, duty cycle ꢀ 2 %

Notes:

2022-09/113

REV:O

*** Limited by bonding wire

12 3 4 5 6 7

中文翻译

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