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RM3075S8(N) PDF预览

RM3075S8(N)

更新时间: 2024-09-13 18:06:27
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
17页 612K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 6.8 A;Rds-on (typ) (mOhms) : 22 mOhms;Total Gate Charge (nQ) typ : 6.8 nQ;Maximum Power Dissipation (W) : 2 W;Vgs(th) (typ) : 1.8 V;Input Capacitance (Ciss) : 398 pF;Polarity : Dual;Mounting Style : SMD/SMT;Package / Case : SOP-8

RM3075S8(N) 数据手册

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RM3075S8  
N and P-Channel Enhancement Mode Power MOSFET  
Description  
The RM3075S8 uses advanced trench technology to provide  
excellent RDS(ON) and low gate charge . The SOP-8 package  
is universally preferred for all commercial industrial surface  
mount applications and suited for high and low side switches  
for inverter ; high and low side switches for generic Half-Bridge,  
low voltage applications such as DC/DC converters.  
N-channel  
P-channel  
General Features  
N-Channel  
Schematic diagram  
VDS = 30V,ID =6.8A  
RDS(ON) < 40m @ VGS=4.5V  
R
DS(ON) < 27m @ VGS=10V  
P-Channel  
DS = -30V,ID = -4.6A  
3075  
V
R
DS(ON) < 103m @ VGS=-4.5V  
DS(ON) < 64m @ VGS=-10V  
R
High power and current handing capability  
Lead free product is acquired  
Marking and pin assignment  
Surface mount package  
Application  
DC/DC converters  
Power management  
SOP-8 top view  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
3075  
RM3075S8  
SOP-8  
8830mm  
12mm  
2500  
units  
Absolute Maximum Ratings (TA=25 unless otherwise noted)  
Parameter  
Symbol  
VDS  
N-Channel P-Channel  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±20  
-30  
±20  
V
V
VGS  
TA=25  
TA=70  
6.8  
-4.6  
Continuous Drain Current  
ID  
A
5.4  
-3.7  
Pulsed Drain Current (Note 1)  
Maximum Power Dissipation  
IDM  
PD  
34  
-23  
A
TA=25  
2.0  
2.0  
W
Operating Junction and Storage Temperature Range  
TJ,TSTG  
-55 To 150  
-55 To 150  
2018-11/15  
REV:A  

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