Datasheet > RM3010S6

RM3010S6

更新时间： 2025-07-30 18:09:59

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	570K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 10.0 A;Rds-on (typ) (mOhms) : 8 mOhms;Total Gate Charge (nQ) typ : 13 nQ;Maximum Power Dissipation (W) : 2.5 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 1550 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23-6L

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RM3010S6 数据手册

RM3010S6

N-Channel Enhancement Mode Power MOSFET

Description

The RM3010S6 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=30V,I_D=10A

R_DS(ON)< 12mꢀ @ V_GS=10V

R_DS(ON)<16mꢀ @ V_GS=4.5V

Schematic diagram

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized Avalanche voltage and current

Application

ƽꢀ Power switching application

ƽꢀ Hard Switched and High Frequency Circuits

ƽꢀ Uninterruptible Power Supply

Halogen-free

SOT-23-6 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

3000 units

3010

RM3010S6

SOT-23-6

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

I_DM

Maximum Power Dissipation

2.5

P_D

T_J,T_STG

Operating Junction and Storage Temperature Range

-55 To 150

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_ꢁJC

ć/W

2021-11/15

REV:

12 3 4 5 6 7

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