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RM3010 PDF预览

RM3010

更新时间: 2024-11-19 18:09:35
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
7页 235K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 10.0 A;Rds-on (typ) (mOhms) : 8 mOhms;Total Gate Charge (nQ) typ : 13 nQ;Maximum Power Dissipation (W) : 2.5 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 1550 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOP-8

RM3010 数据手册

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RM3010  
N-Channel Enhancement Mode Power MOSFET  
Description  
The RM3010 uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate charge. It  
can be used in a wide variety of applications.  
Schematic diagram  
General Features  
ƽ VDS =30V,ID =10A  
RDS(ON) < 12mꢀ @ VGS=10V  
RDS(ON) <16mꢀ @ VGS=4.5V  
ƽ High density cell design for ultra low Rdson  
ƽ Fully characterized Avalanche voltage and current  
Application  
Marking and pin assignment  
ƽꢀ Power switching application  
ƽꢀ Hard Switched and High Frequency Circuits  
ƽꢀ Uninterruptible Power Supply  
Halogen-free  
P/N suffix V means AEC-Q101 qualified, e.g:RM3010V  
SOP-8 top view  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
2500 units  
3010  
RM3010  
SOP-8  
Ø330mm  
12mm  
Absolute Maximum Ratings (TA=25ććunless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
30  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
20  
V
VGS  
10  
6
A
ID  
Drain Current-Continuous(TC=100ć)  
Pulsed Drain Current  
ID (100ć)  
A
50  
2.5  
A
IDM  
Maximum Power Dissipation  
W
ć
PD  
Operating Junction and Storage Temperature Range  
-55 To 150  
TJ,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Case(Note 2)  
RꢁJC  
50  
ć/W  
2020-09/15  
REV:B  

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