Datasheet > RM3010

RM3010

更新时间： 2024-06-27 12:12:01

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	235K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 10.0 A;Rds-on (typ) (mOhms) : 8 mOhms;Total Gate Charge (nQ) typ : 13 nQ;Maximum Power Dissipation (W) : 2.5 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 1550 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : SOP-8

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RM3010 数据手册

RM3010

N-Channel Enhancement Mode Power MOSFET

Description

The RM3010 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

Schematic diagram

General Features

ƽ V_DS=30V,I_D=10A

R_DS(ON)< 12mꢀ @ V_GS=10V

R_DS(ON)<16mꢀ @ V_GS=4.5V

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized Avalanche voltage and current

Application

Marking and pin assignment

ƽꢀ Power switching application

ƽꢀ Hard Switched and High Frequency Circuits

ƽꢀ Uninterruptible Power Supply

Halogen-free

P/N suffix V means AEC-Q101 qualified, e.g:RM3010V

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2500 units

3010

RM3010

SOP-8

Ø330mm

12mm

Absolute Maximum Ratings (T_A=25ććunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

2.5

I_DM

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Case^{(Note 2)}

R_ꢁJC

ć/W

2020-09/15

REV:B

12 3 4 5 6 7

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