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RM1200E-TP PDF预览

RM1200E-TP

更新时间: 2024-11-18 13:12:59
品牌 Logo 应用领域
美微科 - MCC 整流二极管光电二极管高压
页数 文件大小 规格书
3页 238K
描述
Rectifier Diode, 1 Element, 0.5A, 1200V V(RRM), Silicon, DO-214AC, SMAE, 2 PIN

RM1200E-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AC
包装说明:SMAE, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.73
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最大输出电流:0.5 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:1200 V
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

RM1200E-TP 数据手册

 浏览型号RM1200E-TP的Datasheet PDF文件第2页浏览型号RM1200E-TP的Datasheet PDF文件第3页 
RM1200E  
THRU  
RM2000E  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
500 Milliamp  
High Voltage  
Silicon Rectifier  
1200 to 2000 Volts  
Features  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
Low Forward Voltage Drop  
High Current Capability  
High Voltage  
Epoxy meets UL 94 V-0 flammability rating  
·
·
Moisture Sensitivity Level 1  
DO-214AC  
(SMAE)  
Maximum Ratings  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
H
Cathode Band  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
Maximum Maximum  
J
RMS  
DC  
Voltage  
Blocking  
Voltage  
1200V  
1500V  
1800V  
2000V  
RM1200E  
RM1500E  
RM1800E  
RM2000E  
RM12  
RM15  
RM18  
RM20  
1200V  
1500V  
1800V  
2000V  
840V  
1050V  
1260V  
1400V  
A
C
E
D
B
G
DIMENSIONS  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
INCHES  
MIN  
.079  
.050  
.002  
---  
MM  
MIN  
DIM  
A
MAX  
.096  
.075  
.008  
.02  
MAX  
2.44  
1.90  
.20  
NOTE  
Average Forward  
Current  
IF(AV)  
500mA  
TA = 50°C  
2.01  
1.27  
.05  
B
C
D
---  
.51  
Peak Forward Surge  
Current  
IFSM  
30A  
8.3ms, half sine  
E
.030  
.189  
.157  
.090  
.060  
.208  
.180  
.115  
.76  
1.52  
5.30  
4.57  
2.92  
G
H
4.80  
4.00  
2.29  
Maximum  
J
Instantaneous  
Forward Voltage  
RM1200E-RM1800E  
RM2000E  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
SUGGESTED SOLDER  
PAD LAYOUT  
0.090”  
VF  
IR  
2.0V  
3.0V  
IFM = 0.5A;  
TA = 50°C  
5.0µA  
50µA  
TA = 25°C  
TA = 100°C  
0.085”  
Typical Junction  
Capacitance  
CJ  
30pF  
Measured at  
1.0MHz, VR=4.0V  
0.070”  
Note: 1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 3  

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