Datasheet > RM120N40LDV

RM120N40LDV

更新时间： 2024-06-27 12:13:28

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
9页	728K
描述
Vdss (V) : 40 V;Id @ 25C (A) : 85 A;Rds-on (typ) (mOhms) : 3.6 mOhms;Total Gate Charge (nQ) typ : 75 nQ;Maximum Power Dissipation (W) : 120 W;Vgs(th) (typ) : 1.8 V;Input Capacitance (Ciss) : 5400 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : TO-252(D-PAK)

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RM120N40LDV 数据手册

RM120N40LDV

N-Channel Enhancement Mode Power MOSFET

Description

The RM120N40LD uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=40V,I_D=120A

R_DS(ON)<3.5mΩ @ V_GS=10V

R_DS(ON)<5.5mΩ @ V_GS=4.5V

Schematic diagram

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Application

ƽ Loadꢀswitching

TO-252-2L top view

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

ƽ Halogen-free

ƽ P/N suffix V means AEC-Q101 qualified, e.g:RM120N40LDV

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

120N40

RM120N40LD

TO-252-2L

-ꢀ

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

2022-03/59

REV:A

12 3 4 5 6 7...9

中文翻译

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