Datasheet > RM120N60T2

RM120N60T2

更新时间： 2024-06-27 12:12:31

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	305K
描述
Vdss (V) : 60 V;Id @ 25C (A) : 120 A;Rds-on (typ) (mOhms) : 3.5 mOhms;Total Gate Charge (nQ) typ : 67 nQ;Maximum Power Dissipation (W) : 180 W;Vgs(th) (typ) : 1.7 V;Input Capacitance (Ciss) : 4000 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM120N60T2 数据手册

RM120N60T2

N-Channel Super Trench Power MOSFET

Description

The RM120N60T2 uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

ƽ V_DS=60V,I_D=120A

_DS(ON)< 4.0mΩ @ V_GS=10V (Typ:3.5mΩ)

_DS(ON)< 5.0mΩ @ V_GS=4.5V (Typ:4.0mΩ)

ƽ Excellent gate charge x R_DS(on)product

ƽ Very low on-resistance R_DS(on)

ƽ 175 °C operating temperature

ƽ Pb-free lead plating

ƽ 100% UIS tested

Application

TO-220-3L top view

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching

and synchronous

rectification

Halogen-free

100% UIS TESTED!

100% ΔVds TESTED!

Package Marking and Ordering Information

ꢀ

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

120N60

RM120N60T2

TO-220-3L

Absolute Maximum Ratings (T_C=25ććunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V^GS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

120

100

I_D

I_D(100ć)

480

I_DM

Maximum Power Dissipation

180

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

1.2

W/ć

E_AS

500

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2020-01/15

REV:O

12 3 4 5 6 7

中文翻译

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