Datasheet > RM120N30DF

RM120N30DF

更新时间： 2024-10-15 18:10:07

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	221K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 120 A;Rds-on (typ) (mOhms) : 1.95 mOhms;Total Gate Charge (nQ) typ : 63 nQ;Maximum Power Dissipation (W) : 75 W;Vgs(th) (typ) : 1.7 V;Input Capacitance (Ciss) : 3550 pF;Polarity : N-Channel;Mounting Style : SMD/SMT;Package / Case : DFN5X6-8L

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RM120N30DF 数据手册

RM120N30DF

N-Channel Super Trench Power MOSFET

Description

The RM120N30DF uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

General Features

ƽ V_DS=30V,I_D=120A

Schematic Diagram

R_DS(ON)=1.95mꢀ (typical) @ V_GS=10V

_DS(ON)=2.85mꢀ (typical) @ V_GS=4.5V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ 150 °C operating temperature

ƽ Pb-free lead plating

ƽ 100% UIS tested

Top View

Bottom View

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

100% ꢀVds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

120N30

RM120N30DF

DFN5X6-8L

Absolute Maximum Ratings (T_C=25ććunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V^GS

Drain Current-Continuous (Silicon Limited)

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current (Package Limited)

Maximum Power Dissipation

120

84.8

I_D

I_D(100ć)

340

I_DM

P_D

Derating factor

Single pulse avalanche energy ^{(Note 5)}

0.6

W/ć

E_AS

600

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

2016-12

REV:O15

12 3 4 5 6

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