Datasheet > RM120N30T2

RM120N30T2

更新时间： 2024-06-27 12:13:50

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
8页	214K
描述
Vdss (V) : 30 V;Id @ 25C (A) : 120 A;Rds-on (typ) (mOhms) : 3.0 mOhms;Total Gate Charge (nQ) typ : 48 nQ;Maximum Power Dissipation (W) : 120 W;Vgs(th) (typ) : 1.6 V;Input Capacitance (Ciss) : 3550 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM120N30T2 数据手册

RM120N30T2

N-Channel Enhancement Mode Power MOSFET

Description

The RM120N30T2 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It

can be used in a wide variety of applications.

General Features

ƽ V_DS=30V,I_D=120A

R_DS(ON)<3.5mΩ @ V_GS=10V (Typ:3.0mΩ)

Schematic diagram

Marking and pin assignment

TO-220-3L top view

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Good stability and uniformity with high E_AS

ƽ Excellent package for good heat dissipation

ƽ Special process technology for high ESD capability

Application

ƽ Power switching application

ƽ Hard switched and high frequency circuits

ƽ Uninterruptible power supply

Halogen-free

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

120N30

RM120N30T2

TO-220-3L

Absolute Maximum Ratings (T_A=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

120

I_D

I_D(100ć)

I_DM

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

400

120

350

Maximum Power Dissipation

Single pulse avalanche energy ^{(Note 5)}

P_D

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2018-02/15

REV:O

12 3 4 5 6 7 8

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