Datasheet > RM120N85T2

RM120N85T2

更新时间： 2024-06-27 12:13:38

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	196K
描述
Vdss (V) : 85 V;Id @ 25C (A) : 120 A;Rds-on (typ) (mOhms) : 4.5 mOhms;Total Gate Charge (nQ) typ : 55 nQ;Maximum Power Dissipation (W) : 160 W;Vgs(th) (typ) : 3.5 V;Input Capacitance (Ciss) : 5500 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM120N85T2 数据手册

RM120N85T2

Super Trench

N-Channel

Power MOSFET

Description

The RM120N85T2 usesSuper Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of R_DS(ON)and Q_g. This device is ideal for

high-frequency switching and synchronous rectification.

Schematic diagram

General Features

ƽ V_DS=85V,I_D=120A

R_DS(ON)<5.3mΩ @ V_GS=10V

ƽ Excellent gate charge x R_DS(on)product(FOM)

ƽ Very low on-resistance R_DS(on)

ƽ 175 °C operating temperature

ƽ Pb-free lead plating

Marking and pin assignment

ƽ 100% UIS tested

Application

ƽ DC/DC Converter

ƽ Ideal for high-frequency switching and synchronous

rectification

100% UIS TESTED!

100% ∆Vds TESTED!

TO-220-3L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

TO-220-3L

RM120N85T2

120N85

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^GS

120

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

320

160

1.1

784

I_DM

Maximum Power Dissipation

P_D

Derating factor

W/ć

Single pulse avalanche energy^{(Note 5)}

E_AS

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

2016-11

REV:O15

12 3 4 5 6 7

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