Datasheet > RJK0352DSP

RJK0352DSP

更新时间： 2024-11-11 06:07:59

品牌	Logo	应用领域
瑞萨 - RENESAS		开关电源开关
页数	文件大小	规格书
4页	81K
描述
Silicon N Channel Power MOS FET Power Switching

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RJK0352DSP 数据手册

RJK0352DSP

Silicon N Channel Power MOS FET

Power Switching

REJ03G1660-0501

Rev.5.01

Apr 24, 2008

Features

•

Capable of 4.5 V gate drive

Low drive current

High density mounting

Low on-resistance

R_DS(on)= 4.3 mΩ typ. (at V_GS= 10 V)

Pb-free

•

Outline

RENESAS Package code: PRSP0008DD-D

(Package name: SOP-8<FP-8DAV>)

5 6 7 8

D D

1, 2, 3

Source

Gate

5, 6, 7, 8 Drain

S S S

2 3

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

±20

Drain current

Note1

Drain peak current

I_D(pulse)

I_DR

144

Body-drain diode reverse drain current

Avalanche current

Note 2

I_AP

Note 2

Avalanche energy

E_AR

28.9

2.0

Channel dissipation

Pch ^Note3

θch-a ^Note3

Tch

Channel to ambient thermal impedance

Channel temperature

62.5

150

°C/W

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tch = 25°C, Rg ≥ 50 Ω

3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s

REJ03G1660-0501 Rev.5.01 Apr 24, 2008

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12 3 4

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