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RJK0354DSP-00#J0 PDF预览

RJK0354DSP-00#J0

更新时间: 2024-11-12 09:49:23
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
7页 88K
描述
Nch Single Power Mosfet 30V 16A 7Mohm Sop8, SOP, /Embossed Tape

RJK0354DSP-00#J0 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOP
包装说明:,针数:8
Reach Compliance Code:compliant风险等级:1.66
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

RJK0354DSP-00#J0 数据手册

 浏览型号RJK0354DSP-00#J0的Datasheet PDF文件第2页浏览型号RJK0354DSP-00#J0的Datasheet PDF文件第3页浏览型号RJK0354DSP-00#J0的Datasheet PDF文件第4页浏览型号RJK0354DSP-00#J0的Datasheet PDF文件第5页浏览型号RJK0354DSP-00#J0的Datasheet PDF文件第6页浏览型号RJK0354DSP-00#J0的Datasheet PDF文件第7页 
Preliminary Datasheet  
RJK0354DSP  
Silicon N Channel Power MOS FET  
Power Switching  
REJ03G1661-0200  
Rev.2.00  
Apr 05, 2010  
Features  
Capable of 4.5 V gate drive  
Low drive current  
High density mounting  
Low on-resistance  
RDS(on) = 5.4 mtyp. (at VGS = 10 V)  
Pb-free  
Outline  
RENESAS Package code: PRSP0008DD-D  
(Package name: SOP-8<FP-8DAV>)  
5 6 7 8  
D D  
D D  
5
6
7
8
1, 2, 3  
4
Source  
Gate  
4
4
G
3
2
1
5, 6, 7, 8 Drain  
S S S  
1
2 3  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
30  
±20  
V
V
16  
A
Note1  
Drain peak current  
ID(pulse)  
128  
A
Body-drain diode reverse drain current  
Avalanche current  
IDR  
16  
A
Note 2  
IAP  
15  
A
Note 2  
Avalanche energy  
EAR  
22.5  
2.0  
mJ  
W
Channel dissipation  
Pch Note3  
ch-a Note3  
Tch  
Channel to ambient thermal impedance  
Channel temperature  
Storage temperature  
62.5  
150  
C/W  
C  
Tstg  
–55 to +150  
C  
Notes: 1. PW 10 s, duty cycle 1%  
2. Value at Tch = 25C, Rg 50   
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s  
REJ03G1661-0200 Rev.2.00  
Apr 05, 2010  
Page 1 of 6  

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