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RJK0355DSP PDF预览

RJK0355DSP

更新时间: 2024-11-11 06:07:59
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体开关晶体管功率场效应晶体管电源开关
页数 文件大小 规格书
7页 112K
描述
Silicon N Channel Power MOS FET Power Switching

RJK0355DSP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOP
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.72
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

RJK0355DSP 数据手册

 浏览型号RJK0355DSP的Datasheet PDF文件第2页浏览型号RJK0355DSP的Datasheet PDF文件第3页浏览型号RJK0355DSP的Datasheet PDF文件第4页浏览型号RJK0355DSP的Datasheet PDF文件第5页浏览型号RJK0355DSP的Datasheet PDF文件第6页浏览型号RJK0355DSP的Datasheet PDF文件第7页 
RJK0355DSP  
Silicon N Channel Power MOS FET  
Power Switching  
REJ03G1650-0301  
Rev.3.01  
Apr 24, 2008  
Features  
Capable of 4.5 V gate drive  
Low drive current  
High density mounting  
Low on-resistance  
RDS(on) = 8.5 mtyp. (at VGS = 10 V)  
Pb-free  
Outline  
RENESAS Package code: PRSP0008DD-D  
(Package name: SOP-8<FP-8DAV>)  
5 6 7 8  
D D  
D D  
5
6
7
8
1, 2, 3  
4
Source  
Gate  
4
4
G
3
2
1
5, 6, 7, 8 Drain  
S S S  
1
2 3  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
30  
V
V
±20  
Drain current  
12  
A
Note1  
Drain peak current  
ID(pulse)  
IDR  
96  
A
Body-drain diode reverse drain current  
Avalanche current  
12  
A
Note 2  
IAP  
9
8.1  
A
Note 2  
Avalanche energy  
EAR  
mJ  
W
Channel dissipation  
Pch Note3  
θch-a Note3  
Tch  
1.8  
Channel to ambient thermal impedance  
Channel temperature  
69.4  
°C/W  
°C  
150  
Storage temperature  
Tstg  
–55 to +150  
°C  
Notes: 1. PW 10 µs, duty cycle 1%  
2. Value at Tch = 25°C, Rg 50 Ω  
3. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10s  
REJ03G1650-0301 Rev.3.01 Apr 24, 2008  
Page 1 of 6  

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