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RJK0355DPA_13 PDF预览

RJK0355DPA_13

更新时间: 2024-11-11 12:29:51
品牌 Logo 应用领域
瑞萨 - RENESAS 开关电源开关
页数 文件大小 规格书
7页 109K
描述
N Channel Power MOS FET High Speed Power Switching

RJK0355DPA_13 数据手册

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Preliminary Datasheet  
RJK0355DPA  
30V, 30A, 10.7mmax.  
N Channel Power MOS FET  
High Speed Power Switching  
R07DS0916EJ0700  
Rev.7.00  
Mar 19, 2013  
Features  
High speed switching  
Capable of 4.5 V gate drive  
Low drive current  
High density mounting  
Low on-resistance  
Pb-free  
Halogen-free  
Outline  
RENESAS Package code: PWSN0008DE-A  
(Package name: WPAK(3F))  
5
6
7 8  
D D D D  
6 7 8  
5
1, 2, 3 Source  
4 Gate  
5, 6, 7, 8 Drain  
4
G
1
4 3 2  
S
1
S S  
3
2
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
30  
Unit  
V
V
±20  
30  
A
Note1  
Drain peak current  
ID(pulse)  
120  
30  
A
Body-drain diode reverse drain current  
Avalanche current  
IDR  
A
Note 2  
IAP  
9
A
Note 2  
Avalanche energy  
EAR  
8.1  
25  
mJ  
W
Channel dissipation  
Pch Note3  
ch-c Note3  
Tch  
Channel to case thermal resistance  
Channel temperature  
5
C/W  
C  
C  
150  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW 10 s, duty cycle 1%  
2. Value at Tch = 25C, Rg 50   
3. Tc = 25C  
R07DS0916EJ0700 Rev.7.00  
Mar 19, 2013  
Page 1 of 6  

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