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RFL1N08 PDF预览

RFL1N08

更新时间: 2024-09-16 22:24:07
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关
页数 文件大小 规格书
4页 34K
描述
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs

RFL1N08 数据手册

 浏览型号RFL1N08的Datasheet PDF文件第2页浏览型号RFL1N08的Datasheet PDF文件第3页浏览型号RFL1N08的Datasheet PDF文件第4页 
RFL1N08,  
RFL1N10  
Semiconductor  
1A, 80V and 100V, 1.200 Ohm,  
N-Channel, Power MOSFETs  
September 1998  
Features  
Description  
• 1A, 80V and 100V  
These are N-channel enhancement mode silicon-gate power  
field-effect transistors designed for applications such as  
switching regulators, switching converters, motor drivers,  
relay drivers and drivers for high-power bipolar switching  
transistors requiring high speed and low gate-drive power.  
These types can be operated directly from integrated cir-  
cuits.  
[ /Title  
(RFL1N  
08,  
RFL1N1  
0)  
• r  
DS(ON)  
= 1.200  
Ordering Information  
PART NUMBER  
RFL1N08  
PACKAGE  
BRAND  
RFL1N08  
RFL1N10  
TO-205AF  
TO-205AF  
Formerly developmental type TA09282.  
/Subject  
(1A,  
RFL1N10  
80V and  
100V,  
1.200  
Ohm, N-  
Chan-  
nel,  
NOTE: When ordering, use the entire part number.  
Symbol  
D
G
S
Power  
MOS-  
FETs)  
/Author  
()  
Packaging  
JEDEC TO-204AA  
/Key-  
words  
(Harris  
Semi-  
conduc-  
tor, N-  
Chan-  
nel,  
DRAIN  
(CASE)  
SOURCE  
GATE  
Power  
MOS-  
FETs,  
TO-  
204AA)  
/Creator  
()  
/DOCIN  
FO pdf-  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 1385.2  
Copyright © Harris Corporation 1998  
5-1  

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