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RFL1N12 PDF预览

RFL1N12

更新时间: 2024-11-06 22:24:07
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
5页 47K
描述
1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs

RFL1N12 数据手册

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RFL1N12,  
RFL1N15  
Semiconductor  
1A, 120V and 150V, 1.9 Ohm,  
N-Channel Power MOSFETs  
January 1998  
Features  
Description  
• 1A, 120V and 150V  
These are N-Channel enhancement mode silicon gate  
power field effect transistors designed for applications such  
as switching regulators, switching converters, motor drivers,  
relay drivers and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
These types can be operated directly from integrated  
circuits.  
• r  
DS(ON)  
= 1.9  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
Formerly developmental type TA09196.  
• Majority Carrier Device  
• Related Literature  
Symbol  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
D
Ordering Information  
G
PART NUMBER  
RFL1N12  
PACKAGE  
TO-205AF  
TO-205AF  
BRAND  
RFL1N12  
RFL1N15  
S
RFL1N15  
NOTE: When ordering, use the entire part number.  
Packaging  
JEDEC TO-205AF  
DRAIN  
(CASE)  
SOURCE  
GATE  
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.  
File Number 1444.2  
Copyright © Harris Corporation 1997  
5-1  

RFL1N12 替代型号

型号 品牌 替代类型 描述 数据表
MMBF170-7-F DIODES

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