Datasheet > RFL1N10L

RFL1N10L

更新时间： 2024-11-06 22:24:07

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲
页数	文件大小	规格书
5页	33K
描述
1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET

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RFL1N10L 数据手册

RFL1N10L

1A, 100V, 1.200 Ohm, Logic Level, N-Channel

Power MOSFET

September 1998

Features

Description

• 1A, 100V

This is an N-Channel enhancement mode silicon gate power

ﬁeld effect transistor speciﬁcally designed for use with logic

level (5V) driving sources in applications such as program-

mable controllers, automotive switching, and solenoid driv-

ers. This performance is accomplished through a special

gate oxide design which provides full rated conduction at

• r

DS(ON)

= 1.200Ω

Ordering Information

gate biases in the 3V to 5V range, thereby facilitating true

on-off power control directly from logic circuit supply volt-

ages.

PART NUMBER

RFL1N10L

PACKAGE

TO-205AF

BRAND

RFL1N10L

NOTE: When ordering, use the entire part number.

Formerly developmental type TA09524.

Symbol

Packaging

JEDEC TO-205AF

DRAIN

(CASE)

SOURCE

GATE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

File Number 1510.3

12 3 4 5

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