Datasheet > RD38F4040M0Y1C0

RD38F4040M0Y1C0

更新时间： 2024-11-09 05:34:15

品牌	Logo	应用领域
英特尔 - INTEL		静态存储器
页数	文件大小	规格书
68页	1704K
描述
Memory Circuit, Flash+SRAM, PBGA107

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数据手册

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RD38F4040M0Y1C0 数据手册

Intel StrataFlash Cellular Memory (M18)

Datasheet

Product Features

High-Performance Read, Program and Erase

Power

— Core voltage: 1.7 V - 2.0 V

— 96 ns initial read access

— 108 MHz with zero wait-state synchronous

burst reads: 7 ns clock-to-data output

— 133 MHz with zero wait-state synchronous

burst reads: 5.5 ns clock-to-data output

— 8-, 16-, and continuous-word

synchronous-burst Reads

— Programmable WAIT configuration

— Customer-configurable output driver

impedance

— Buffered Programming:

— I/O voltage: 1.7 V - 2.0 V

— Standby current: 60 µA (typ) for 512-Mbit,

65 nm

— Deep Power-Down mode: 2 µA (typ)

— Automatic Power Savings mode

— 16-word synchronous-burst read current:

23 mA (typ) @ 108 MHz; 24 mA (typ) @

133 MHz

Software

— Intel^®Flash Data Integrator (Intel^®FDI)

optimized

2.0 µs/Word (typ), 512-Mbit 65 nm;

Block Erase: 0.9 s per block (typ)

— 20 µs (typ) program/erase suspend

Architecture

— Basic Command Set and Extended

Command Set compatible

— Common Flash Interface

— 16-bit wide data bus

— Multi-Level Cell Technology

Security

— OTP Registers:

— Symmetrically-Blocked Array Architecture

— 256-Kbyte Erase Blocks

64 unique pre-programmed bits

2112 user-programmable bits

— Absolute write protection with V_PP= GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

— 1-Gbit device: Eight 128-Mbit partitions

— 512-Mbit device: Eight 64-Mbit partitions

— 256-Mbit device: Eight 32-Mbit partitions.

— 128-Mbit device: Eight 16-Mbit partitions.

— Read-While-Program and Read-While-Erase

— Status Register for partition/device status

— Blank Check feature

Density and Packaging

— Density: 128-, 256-, and 512-Mbit, and 1-

Gbit

— Address-data multiplexed and non-

multiplexed interfaces

— x16D (105-ball) Flash SCSP

— x16C (107-ball) Flash SCSP

— 0.8 mm pitch lead-free solder-ball

Quality and Reliability

— Expanded temperature: –30 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ X Process Technology (65 nm)

— ETOX™ IX Process Technology (90 nm)

Document Number: 309823-009US

July 2007

12 3 4 5 6 7...68

中文翻译

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与RD38F4040M0Y1C0相关器件

型号	品牌	获取价格	描述	数据表
RD38F4044L0YWQ0	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, PBGA88,
RD38F4050L0YBQ0	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, PBGA88,
RD38F4050L0YFQ0	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, PBGA88,
RD38F4050L0YUQ0	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, PBGA88,
RD38F4050L0YWQ0	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, PBGA88,
RD38F4050L0ZBQ0	INTEL	获取价格	Memory Circuit, Flash+PSRAM, 16MX16, CMOS, PBGA88, 8 X 10 MM, SCSP-88
RD38F4050L0ZTQ0	INTEL	获取价格	Memory Circuit, Flash+PSRAM, 16MX16, CMOS, PBGA88, 8 X 10 MM, SCSP-88
RD38F4050L0ZTQ1	NUMONYX	获取价格	Memory Circuit, Flash+PSRAM, Hybrid, PBGA88,
RD38F4060L0YBB0	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA103,
RD38F4062L0YBB0	NUMONYX	获取价格	Memory Circuit, Flash+SDRAM, PBGA103,

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