Datasheet > RD05MMP1_10

RD05MMP1_10

更新时间： 2024-11-06 12:20:23

品牌	Logo	应用领域
三菱 - MITSUBISHI		晶体晶体管
页数	文件大小	规格书
8页	147K
描述
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W

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RD05MMP1_10 数据手册

Silicon RF Power Semiconductors

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD05MMP1

RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W

(a)

(b)

DESCRIPTION

OUTLINE DRAWING

7.0+/-0.2

0.2+/-0.05

8.0+/-0.2

RD05MMP1 is a MOS FET type transistor

specifically designed for UHF RF power

amplifiers applications.

(d)

FEATURES

•High power gain:

2.6+/-0.2

(4.5)

0.95+/-0.2

INDEX MARK

[Gate]

Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz

•High Efficiency: 43%min. (941MHz)

•No gate protection diode

(c)

TOP VIEW

SIDE VIEW

BOTTOM VIEW

DETAIL

Terminal No.

(a)Drain [output]

(b)Source [GND]

(c)Gate [input]

(d)Source

APPLICATION

For output stage of high power amplifiers in

941MHz band mobile radio sets.

SIDE VIEW

UNIT:mm

NOTES:

DETAIL

1. ( ) Typical value

RoHS COMPLIANT

RD05MMP1 is a RoHS compliant product.

RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high

melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)

ABSOLUTE MAXIMUM RATINGS

(Tc=25 UNLESS OTHERWISE NOTED)

°C

SYMBOL

VDSS

VGSS

Pch

PARAMETER

Drain to source voltage Vgs=0V

Gate to source voltage

Channel dissipation

Input Power

CONDITIONS

RATINGS

-5 to +10

UNIT

Vds=0V

Tc=25°C

Zg=Zl=50Ω

1.4

Tch

Tstg

Rth j-c

Drain Current

150

-40 to +125

1.7

°C

Junction Temperature

Storage temperature

Thermal resistance

°C

°C/W

Junction to case

Note: Above parameters are guaranteed independently.

ELECTRICAL CHARACTERISTICS (Tc=25 , UNLESS OTHERWISE NOTED)

°C

LIMITS

TYP MAX.

UNIT

SYMBOL

PARAMETER

CONDITIONS

MIN

0.5

5.5

I_DSS

I_GSS

V_TH

Pout

ηD

Zero gate voltage drain current V_DS=17V, V_GS=0V

2.5

Gate to source leak current

Gate threshold Voltage

Output power

V_GS=10V, V_DS=0V

V_DS=12V, I_DS=1mA

f=941MHz , V_DD=7.2V

Pin=0.7W,Idq=1.0A

Drain efficiency

V_DD=9.5V,Po=5.5W(Pin Control)

f=941MHz,Idq=1.0A,Zg=50Ω

Load VSWR=20:1(All Phase)

VSWRT Load VSWR tolerance

No destroy

Note : Above parameters , ratings , limits and conditions are subject to change.

RD05MMP1

17 Aug 2010

1/9

12 3 4 5 6 7 8

中文翻译

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与RD05MMP1_10相关器件

型号	品牌	获取价格	描述	数据表
RD05MMP1_11	MITSUBISHI	获取价格	RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
RD-0687	TAIYO YUDEN	获取价格	DC-DC Regulated Power Supply Module, 1 Output, Hybrid, SIP-10
RD06HHF1	MITSUBISHI	获取价格	Silicon MOSFET Power Transistor 30MHz,6W
RD06HHF1_08	MITSUBISHI	获取价格	RF POWER MOS FET Silicon MOSFET Power Transistor 30MHz,6W
RD06HHF1_10	MITSUBISHI	获取价格	RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W
RD06HHF1_11	MITSUBISHI	获取价格	RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W
RD06HVF1	MITSUBISHI	获取价格	RF POWER MOS FET Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1_08	MITSUBISHI	获取价格	RF POWER MOS FET Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1_10	MITSUBISHI	获取价格	RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W
RD06HVF1_11	MITSUBISHI	获取价格	RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W

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