Datasheet > RD06HHF1_11

RD06HHF1_11

更新时间： 2024-11-06 11:59:07

品牌	Logo	应用领域
三菱 - MITSUBISHI		晶体晶体管
页数	文件大小	规格书
9页	583K
描述
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W

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RD06HHF1_11 数据手册

< Silicon RF Power MOS FET (Discrete) >

RD06HHF1

RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,6W

OUTLINE DRAWING

DESCRIPTION

RD06HHF1 is a MOS FET type transistor specifically

1.3+/-0.4

9.1+/-0.7

designed for HF RF power amplifiers applications.

3.6+/-0.2

FEATURES

High power gain:

Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz

1.2+/-0.4

0.8+0.10/-0.15

APPLICATION

For output stage of high power amplifiers in

HF band mobile radio sets.

0.5+0.10/-0.15

2.5 2.5

5deg

PINS

1:GATE

9.5MAX

2:SOURCE

3:DRAIN

RoHS COMPLIANT

note:

RD06HHF1-101 is a RoHS compliant products.

RoHS compliance is indicate by the letter “G” after the lot

marking.

Torelance of no designation means typical value.

This product include the lead in high melting temperaturetype solders.

However,it is applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

Publication Date : Oct．2011

12 3 4 5 6 7...9

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