Datasheet > RD07MVS1B_10

RD07MVS1B_10

更新时间： 2024-11-09 09:36:51

品牌	Logo	应用领域
三菱 - MITSUBISHI		晶体晶体管
页数	文件大小	规格书
9页	209K
描述
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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RD07MVS1B_10 数据手册

Silicon RF Power Semiconductors

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RD07MVS1B

RoHS Compliance,

Silicon MOSFET Power Transistor,175MHz,520MHz,7W

DESCRIPTION

OUTLINE DRAWING

RD07MVS1B is a MOS FET type transistor

specifically designed for VHF/UHF RF power

amplifiers applications.

4.6+/-0.05

3.3+/-0.05

0.8+/-0.05

6.0+/-0.15

0.2+/-0.05

RD07MVS1B improved a drain surge than

RD07MVS1 by optimizing MOSFET structure.

FEATURES

High power gain:

Pout>7W, Gp>10dB

(0.25)

@Vdd=7.2V,f=520MHz

High Efficiency: 60%typ. (175MHz)

High Efficiency: 55%typ. (520MHz)

INDEX MARK

(Gate)

Terminal No.

1.Drain (output)

2.Source (GND)

3.Gate (input)

APPLICATION

For output stage of high power amplifiers in

VHF/UHF band mobile radio sets.

Note

( ):center value

UNIT:mm

RoHS COMPLIANT

RD07MVS1B-101, T112 is a RoHS compliant product.

RoHS compliance is indicating by the letter “G” after the Lot Marking.

This product includes the lead in high melting temperature type solders.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

RD07MVS1B

17 Aug 2010

1/9

12 3 4 5 6 7...9

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与RD07MVS1B_10相关器件

型号	品牌	获取价格	描述	数据表
RD07MVS1B_11	MITSUBISHI	获取价格	RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1B-101	MITSUBISHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RD07MVS1B-101,T112	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
RD07MVS1B-T112	MITSUBISHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RD07MVS1-T112	MITSUBISHI	获取价格	Silicon MOSFET Power Transistor,175MHz,520MHz,7W
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