Datasheet > RD07MUS2B-T512

RD07MUS2B-T512

更新时间： 2024-11-06 15:49:19

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
14页	610K
描述
RF Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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RD07MUS2B-T512 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.68
Base Number Matches：	1

RD07MUS2B-T512 数据手册

< Silicon RF Power MOS FET (Discrete) >

RD07MUS2B

RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W

OUTLINE DRAWING

DESCRIPTION

RD07MUS2B of RoHS-compliant product

is a MOS FET type transistor specifically

designed for VHF/UHF/870MHz RF power

amplifiers applications.

FEATURES

High power gain and High Efficiency.

Typical

ηD

(175MHz) 7.2W 13.8dB

65%

63%

58%

(527MHz)

(870MHz)

13.0dB

11.5dB

Integrated gate protection diode.

APPLICATION

For output stage of high power amplifiers in

VHF/UHF/800MHz-band mobile radio sets.

RoHS COMPLIANT

RD07MUS2B is a RoHS compliant product.

ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED)

SYMBOL

VDSS

VGSS

Pch

PARAMETER

Drain to source voltage

Gate to source voltage

Channel dissipation

Input Power

CONDITIONS

RATINGS

UNIT

Vgs=0V

Vds=0V

Tc=25°C

-5/+10

Zg=Zl=50

0.8*

Drain Current

°C

Tch

Junction Temperature

Storage temperature

Thermal resistance

150

°C

Tstg

-40 to +125

2.5

°C/W

Rth j-c

Junction to case

Note: Above parameters are guaranteed independently.

*: 175MHz spec. is 0.6W

Publication Date : Jun．2019

12 3 4 5 6 7...14

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