Datasheet > RD07MVS1_11

RD07MVS1_11

更新时间： 2024-11-06 12:23:11

品牌	Logo	应用领域
三菱 - MITSUBISHI		晶体晶体管
页数	文件大小	规格书
10页	453K
描述
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

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RD07MVS1_11 数据手册

< Silicon RF Power MOS FET (Discrete) >

RD07MVS1

RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W

OUTLINE DRAWING

DESCRIPTION

4.6+/-0.05

3.3+/-0.05

0.8+/-0.05

RD07MVS1 is a MOS FET type transistor

6.0+/-0.15

0.2+/-0.05

specifically designed for VHF/UHF RF power

amplifiers applications.

FEATURES

(0.25)

High power gain:

INDEX MARK

Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz

High Efficiency: 60%typ. (175MHz)

High Efficiency: 55%typ. (520MHz)

(Gate)

Terminal No.

1.Drain (output)

2.Source (GND)

3.Gate (input)

Note

( ):center value

UNIT:mm

APPLICATION

For output stage of high power amplifiers in

VHF/UHF band mobile radio sets.

RoHS COMPLIANT

RD07MVS1-101, T112 is a RoHS compliant product.

RoHS compliance is indicating by the letter “G” after the Lot Marking.

This product includes the lead in high melting temperature type solders.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)

Publication Date : Oct．2011

12 3 4 5 6 7...10

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与RD07MVS1_11相关器件

型号	品牌	获取价格	描述	数据表
RD07MVS1-101	MITSUBISHI	获取价格	Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1-101,T112	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
RD07MVS1B	MITSUBISHI	获取价格	Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1B_10	MITSUBISHI	获取价格	RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1B_11	MITSUBISHI	获取价格	RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS1B-101	MITSUBISHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RD07MVS1B-101,T112	MITSUBISHI	获取价格	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel
RD07MVS1B-T112	MITSUBISHI	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RD07MVS1-T112	MITSUBISHI	获取价格	Silicon MOSFET Power Transistor,175MHz,520MHz,7W
RD07MVS2	MITSUBISHI	获取价格	Silicon MOSFET Power Transistor,175MHz,520MHz,7W