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RD07

更新时间: 2024-11-06 00:04:23
品牌 Logo 应用领域
三菱 - MITSUBISHI 晶体晶体管
页数 文件大小 规格书
8页 245K
描述
Silicon MOFSET Power Transistor

RD07 数据手册

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MITSUBISHI RF POWER MOS FET  
ELECTROSTATIC SENSITIVE DEVICE  
OBSERVE HANDLING PRECAUTIONS  
RD07MVS1  
Silicon MOSFET Power Transistor,175MHz,520MHz,7W  
DESCRIPTION  
OUTLINE DRAWING  
RD07MVS1 is a MOS FET type transistor  
specifically designed for VHF/UHF RF  
power amplifiers applications.  
4.6+/-0.05  
3.3+/-0.05  
0.8+/-0.05  
6.0+/-0.15  
0.2+/-0.05  
1
2
FEATURES  
•High power gain:  
Pout>7W, Gp>10dB@Vdd=7.2V,f=520MHz  
•High Efficiency: 60%typ. (175MHz)  
•High Efficiency: 55%typ. (520MHz)  
3
(0.25)  
(0.25)  
APPLICATION  
INDEX MARK  
(Gate)  
For output stage of high power amplifiers in  
Terminal No.  
VHF/UHF band mobile radio sets.  
1.Drain (output)  
2.Source (GND)  
3.Gate (input)  
Note  
( ):center value  
UNIT:mm  
ABSOLUTE MAXIMUM RATINGS  
(Tc=25 UNLESS OTHERWISE NOTED)  
°C  
SYMBOL  
VDSS  
VGSS  
Pch  
PARAMETER  
CONDITIONS  
RATINGS  
UNIT  
V
Drain to source voltage Vgs=0V  
30  
+/- 20  
50  
Gate to source voltage  
Channel dissipation  
Input Power  
Vds=0V  
V
Tc=25°C  
Zg=Zl=50  
W
Pin  
1.5  
W
ID  
Drain Current  
-
3
A
°C  
Tj  
Junction Temperature  
Storage temperature  
Thermal resistance  
-
150  
°C  
°C/W  
Tstg  
-
-40 to +125  
2.5  
Rth j-c  
Junction to case  
Note 1: Above parameters are guaranteed independently.  
ELECTRICAL CHARACTERISTICS (Tc=25 , UNLESS OTHERWISE NOTED)  
°C  
LIMITS  
UNIT  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
TYP  
MAX.  
200  
1
I
Zero gate voltage drain current  
Gate to source leak current  
V
V
=17V, V =0V  
-
-
-
-
uA  
uA  
V
W
%
W
%
-
DSS  
GSS  
TH  
DS  
GS  
GS  
I
=10V, V =0V  
DS  
Gate wthreshwold Vowltage.DataSheet4U.com  
V
V
DS  
=12V, I =1mA  
1.4  
7
55  
7
50  
1.7  
2.4  
DS  
Pout1 Output power  
Drain efficiency  
f=175MHz , V =7.2V  
8
-
-
-
-
DD  
Pin=0.3W,Idq=700mA  
60  
ηD1  
Pout2 Output power  
f=520MHz , V =7.2V  
8
55  
DD  
Drain efficiency  
Load VSWR tolerance  
Pin=0.7W,Idq=750mA  
ηD2  
V
DD  
=9.2V,Po=7W(PinControl)  
No destroy  
f=175MHz,Idq=700mA,Zg=50Ω  
Load VSWR=20:1(All Phase)  
Load VSWR tolerance  
V
DD  
=9.2V,Po=7W(PinControl)  
No destroy  
-
f=520MHz,Idq=750mA,Zg=50Ω  
Load VSWR=20:1(All Phase)  
Note : Above parameters , ratings , limits and conditions are subject to change.  
RD07MVS1  
REV.7  
www.DataSheet42UAp.rc. 2o00m4  
MITSUBISHI ELECTRIC  
1/8  

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