Datasheet > RB706F-40

RB706F-40

更新时间： 2024-11-18 06:07:11

品牌	Logo	应用领域
商升特 - SEMTECH		肖特基二极管
页数	文件大小	规格书
2页	218K
描述
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

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中文翻译

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数据手册

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RB706F-40 数据手册

RB706F-40

SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

For low current rectification

Features

• High reliability

• Low reverse current

Marking Code: ZA

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Repetitive Peak Reverse Voltage

Reverse Voltage

Symbol

V_RM

V_R

Value

Unit

Average Rectified Forward Current

Peak Forward Surge Current (t = 8.3 ms)

Junction Temperature

I_O

200

I_FSM

T_j

125

Storage Temperature Range

- 55 to + 125

T_stg

Characteristics at T_a= 25 C

Parameter

Symbol

V_F

Min.

Typ.

Max.

0.37

Unit

Forward Voltage

at I_F= 1 mA

Reverse Current

at V_R= 10 V

I_R

µA

Reverse Breakdown Voltage

at I_R= 10 µA

V_(BR)R

C_T

Capacitance between Terminals

at V_R= 1 V, f = 1 MHz

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 12/03/2009

中文翻译

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