Datasheet > RB706F-40_08

RB706F-40_08

更新时间： 2024-11-20 12:20:27

品牌	Logo	应用领域
罗姆 - ROHM		二极管
页数	文件大小	规格书
4页	171K
描述
Shottky barrier diode

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中文翻译

获取价格

数据手册

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RB706F-40_08 数据手册

RB706F-40

Diodes

Shottky barrier diode

RB706F-40

zApplication

zExternal dimensions (Unit : mm)

zLead size figure (Unit : mm)

Low current rectification

㪈㪅㪊

ꢀꢁꢂrꢂꢁꢀ

ꢂꢁꢅrꢂꢁꢃ

zFeatures

㪇㪅㪍㪌

ฦ

߽ߣ࠼࡯࡝

หኸᴺ

Each lead has same dimension

ꢂꢁꢃꢄrꢂꢁꢂꢄ

1) Small mold type. (UMD3)

ꢆꢅꢇ

2) Low V

3) High reliability.

㪇㪅㪏㪤㪠㪥

㪬㪤㪛㪊

ꢂ㨪ꢂꢁꢃ

ꢆꢀꢇ

ꢆꢃꢇ

zStructure

Silicon epitaxial planer

zStructure

㧔ꢂꢁꢈꢄ㧕

㩷

ꢂꢁꢊrꢂꢁꢃ

ꢂꢁꢉrꢂꢁꢃ

ꢃꢁꢅrꢂꢁꢃ

㪩㪦㪟㪤㩷㪑㩷㪬㪤㪛㪊

㪡㪜㪛㪜㪚㩷㪑㩷㪪㪦㪫㪄㪊㪉㪊

㪡㪜㪠㪫㪘㩷㪑㩷㪪㪚㪄㪎㪇

㪻㫆㫋㩷㩿㫐㪼㪸㫉㩷㫎㪼㪼㫂㩷㪽㪸㪺㫋㫆㫉㫐㪀

zTaping dimensions (Unit : mm)

㱢㪈㪅㪌㪌㫧㪇㪅㪇㪌

㪉㪅㪇㫧㪇㪅㪇㪌

㪋㪅㪇㫧㪇㪅㪈

㪇㪅㪊㫧㪇㪅㪈

㪉㪅㪉㪌㫧㪇㪅㪈

䇭䇭䇭䇭㩷㪇

㱢㪇㪅㪌㫧㪇㪅㪇㪌

㪋㪅㪇㫧㪇㪅㪈

㪈㪅㪉㪌㫧㪇㪅㪈

zAbsolute maximum ratings (Ta=25qC)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current

Forward current surge peak (60Hz̠1cyc)

Junction temperature

200

125

I_FSM

㷄

Storage temperature

-40 to +125

Tstg

㷄

zElectrical characteristics (Ta=25qC)

Parameter

Conditions

I_F=1mA

Symbol

Min.

Typ.

0.26

0.05

2.0

Max.

0.37

Unit

Forward voltage

V_F

I_R

Reverse current

μA

V_R=10V

Capacitance between terminals

V_R=1V , f=1MHz

Rev.A

1/3

12 3 4

中文翻译

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