Schottky Barrier Diode
RB706UM-40
Data Sheet
lApplication
lDimensions (Unit : mm)
lLand Size Figure (Unit : mm)
2.0±0.1
0.9±0.1
1.3
High speed switching
+0.1
-0.05
Each leads has
0.32
same dimensions
(3)
0.65
lFeatures
3J
1) Ultra small mold type
(UMD3F)
0~0.1
0.8MIN
UMD3F
(1)
(2)
2) High reliability
lStructure
0.65
0.65
0.13±0.05
(3)
1.3±0.1
Super low VF
3)
(1) Anode
ROHM : UMD3F
JEDEC : SOT-323FL
JEITA : SC-85
(2) Cathode
(3) Cathode/
Anode
(1)
(2)
: Year, week and factory
lConstruction
lTaping Dimensions (Unit : mm)
Silicon epitaxial planar type
TL
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Conditions
Duty≦0.5
Limits
Symbol
VRM
VR
Unit
V
45
40
Repetitive peak reverse voltage
Reverse voltage
Direct reverse voltage
V
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, per diode
60Hz half sin wave, non-repetitive at Ta=25ºC,
1cycle, per diode
IO
Average forward rectified current
Non-repetitive forward surge current
Operating Junction Temperature
Storage temperature
30
mA
A
IFSM
Tj
0.2
125
-
-
°C
Tstg
-55 to +125 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Forward voltage
Conditions
IF=1mA
Symbol
Min. Typ. Max. Unit
VF
IR
-
-
-
-
-
0.37
V
VR=30V
Reverse current
1
-
mA
pF
f=1MHz, VR=1V
Ct
Capacitance between terminals
1.4
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2016.08 - Rev.A
1/4