Datasheet > RB706F-40

RB706F-40

更新时间： 2024-11-20 02:51:11

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		肖特基二极管
页数	文件大小	规格书
3页	176K
描述
Schottky Barrier Diode

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中文翻译

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RB706F-40 数据手册

BL Galaxy Electrical

Production specification

Schottky Barrier Diode

RB706F-40

FEATURES

Lead-free

Small surface mounting type.

Low V_Fand low I_R.

High reliability.

APPLICATIONS

For general purpose applications.

SOT-323

ORDERING INFORMATION

Type No.

Marking

Package Code

SOT-323

RB706F-40

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Parameter

Symbol

V_RM

V_R

Limits

Unit

Non-Repetitive Peak reverse voltage

Diode reverse voltage

Average output Current

Forward Surge Current (10ms)

Power Dissipation

I_O

I_FSM

P_d

200

℃

100

Junction temperature

T_j

125

Storage temperature range

T_stg

-55-+125

℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

V_R=10V

MIN

Typ.

MAX

UNIT

μA

Reverse current

Forward voltage

I_R

V_F

I_F=1mA

0.37

Diode capacitance

C_D

V_R=1V, f=1MHz

Document number: BL/SSSKF026

Rev.A

www.galaxycn.com

12 3

中文翻译

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