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RB520CS30L PDF预览

RB520CS30L

更新时间: 2024-11-05 12:46:51
品牌 Logo 应用领域
恩智浦 - NXP 二极管
页数 文件大小 规格书
14页 709K
描述
100 mA low VF MEGA Schottky barrier rectifier

RB520CS30L 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DFN包装说明:1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.67
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PBCC-N2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):260
最大功率耗散:0.315 W认证状态:Not Qualified
参考标准:AEC-Q101; IEC-60134最大重复峰值反向电压:30 V
表面贴装:YES技术:SCHOTTKY
端子面层:TIN端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
Base Number Matches:1

RB520CS30L 数据手册

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RB520CS30L  
SOD882  
100 mA low VF MEGA Schottky barrier rectifier  
Rev. 1 — 10 March 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an  
integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small  
Surface-Mounted Device (SMD) plastic package.  
1.2 Features and benefits  
„ Average forward current: IF(AV) 100 mA  
„ Reverse voltage: VR 30 V  
„ Low forward voltage: VF 450 mV  
„ Low reverse current: IR 0.5 μA  
„ AEC-Q101 qualified  
„ Leadless ultra small SMD plastic package  
1.3 Applications  
„ Low current rectification  
„ High efficiency DC-to-DC conversion  
„ Switch Mode Power Supply (SMPS)  
„ Reverse polarity protection  
„ Low power consumption applications  
1.4 Quick reference data  
Table 1.  
Symbol  
IF(AV)  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
average forward current  
square wave;  
δ = 0.5; f = 20 kHz  
[1]  
[2]  
Tamb 135 °C  
Tsp 145 °C  
VR = 10 V  
-
-
-
-
-
-
-
100  
100  
mA  
mA  
μA  
V
IR  
reverse current  
reverse voltage  
forward voltage  
0.14 0.5  
VR  
VF  
-
30  
IF = 10 mA  
330  
450  
mV  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for  
cathode 1 cm2.  
[2] Pulse test: tp 300 μs; δ ≤ 0.02.  

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