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RB520G-30 PDF预览

RB520G-30

更新时间: 2024-11-21 14:54:03
品牌 Logo 应用领域
先科 - SWST 肖特基二极管
页数 文件大小 规格书
3页 106K
描述
肖特基二极管

RB520G-30 数据手册

 浏览型号RB520G-30的Datasheet PDF文件第2页浏览型号RB520G-30的Datasheet PDF文件第3页 
RB520G-30  
Silicon Epitaxial Planar Schottky Barrier Diode  
PINNING  
Features  
DESCRIPTION  
Cathode  
PIN  
1
• Ultra small mold type  
• Low IR  
Anode  
2
• High reliability  
2
1
E
Top View  
Marking Code: "E"  
Simplified outline SOD-723 and symbol  
Applications  
• Low current rectification  
Absolute Maximum Ratings (Ta = 25)  
Parameter  
Symbol  
VR  
Value  
30  
Unit  
V
Reverse Voltage  
Average rectified forward current  
Peak Forward Surge Current (8.3 ms)  
Junction Temperature  
IF(AV)  
IFSM  
Tj  
100  
mA  
mA  
500  
125  
Storage Temperature Range  
Tstg  
- 40 to + 125  
Characteristics at Ta = 25℃  
Parameter  
Symbol  
VF  
Max.  
0.45  
Unit  
V
Forward Voltage  
at IF = 10 mA  
Reverse Current  
at VR = 10 V  
IR  
0.5  
µA  
1 / 3  
®
Dated: 31/12/2021 Rev: 04  

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RB520HS-30是超小型封装(0603尺寸)的肖特基势垒二极管。